Charge-induced distortion and stabilization of surface transfer doped porphyrin films
نویسندگان
چکیده
منابع مشابه
Charge-induced distortion and stabilization of surface transfer doped porphyrin films.
The interaction between zinc-tetraphenylporphyrin (ZnTPP) and fullerenes (C60 and C60F48) are studied using ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling microscopy (STM). Low temperature STM reveals highly ordered ZnTPP monolayers on Au(111). In contrast to C60, a submonolayer coverage of C60F48 results in long-range disorder of the underlying single ZnTPP layer and disto...
متن کاملPhoto-induced Intermolecular Charge Transfer in Porphyrin Complexes
Optical excitation of the sequential supermolecule H2P −ZnP −Q induces an electron transfer from the free-base porphyrin (H2P ) to the quinone (Q) via the zinc porphyrin (ZnP ). This process is modeled by equations of motion for the reduced density matrix which are solved numerically and approximately analytically. These two solutions agree very well in a great region of parameter space. It is ...
متن کاملCharge transfer , surface charging , and overlayer - induced faceting
Local density functional calculations are used to analyze the change of surface energy of metallic surfaces upon surface charging. We then studied the systems involving overlayers of fcc metals on Mo~111! and Mo~211!. It has been observed experimentally that some fcc overlayers can drive Mo~111! and W~111! surfaces to facet to the $211% orientation, and there is a strong correlation between the...
متن کاملCharge profile of surface doped C 60
We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer fo...
متن کاملCharge Transfer between Isomer Domains on n+-Doped Si(111)-2x1: Energetic Stabilization
Domains of different surface reconstruction – negativelyor positively-buckled isomers – have been previously observed on highly n-doped Si(111)-2×1 surfaces by angle-resolved ultraviolet photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. At low temperature, separate domains of the two isomer types are apparent in the data. It was argued in the prior work that the negativ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Journal of Chemical Physics
سال: 2013
ISSN: 0021-9606,1089-7690
DOI: 10.1063/1.4815978